Semiconductor device

ABSTRACT

A semiconductor device includes a semiconductor module including a semiconductor element, a passive element, a cooling member, a first conductive member and a second conductive member. The cooling member is disposed between the semiconductor module and the passive element. And a first conductive member and a second conductive member electrically connect the semiconductor module and the passive element. Furthermore, two or more aspects of at least one of the first conductive member and the second conductive member face the cooling member.

BACKGROUND

1. Technical Field

The present disclosure relates to a semiconductor device used for powerconversion in an inverter device or the like.

2. Description of the Related Art

In recent years, there is used an inverter circuit which is based onsemiconductor modules in which an IGBT (Insulated Gate BipolarTransistor) element and the like are incorporated, for driving anelectric motor of an electric car, a hybrid car or the like. However,since these semiconductor modules are operated with a large current, agreat amount of heat is generated. Accordingly, there may be caused aproblem that a capacitor, a control circuit and the like installed inthe vicinity are placed at a high temperature, resulting in malfunction.

Unexamined Japanese Patent Publication No. 2010-252461 discloses a powerconversion device according to which a cooler is disposed between asemiconductor module and a capacitor, and a capacitor terminalconnecting the capacitor and a semiconductor element is thermally incontact with the cooler so as to cool the capacitor terminal. Heattransfer from the semiconductor module to the capacitor is therebysuppressed, and an increase in the temperature of the capacitor isreduced.

Furthermore, Unexamined Japanese Patent Publication No. 2005-73374discloses a power conversion device which places a semiconductor modulebetween refrigerant tubes and cools the semiconductor module so as toreduce harmful effect and the like of heat on other devices.

SUMMARY

A first semiconductor device according to the present disclosureincludes a semiconductor module including a semiconductor element, apassive element, a cooling member, a first conductive member and asecond conductive member. The cooling member is disposed between thesemiconductor module and the passive element. The first conductivemember and the second conductive member electrically connect thesemiconductor module and the passive element. Furthermore, two or moreaspects of at least one of the first conductive member and the secondconductive member face the cooling member.

According to the configuration, compared to a case where only one aspectof a conductive member faces a cooling member, heat dissipation from theconductive member, which is electrically connecting the semiconductormodule and the passive element, to the cooling member is promoted. Andheat transferred from the semiconductor module to the passive elementthrough the conductive member may be suppressed. Accordingly, anincrease in the temperature of the passive element due to heat from thesemiconductor module may be suppressed.

Furthermore, a second semiconductor device according to the presentdisclosure includes a semiconductor module including a semiconductorelement, a passive element, a cooling member, a first conductive memberand a second conductive member. The cooling member is disposed betweenthe semiconductor module and the passive element. The first conductivemember and the second conductive member electrically connect thesemiconductor module and the passive element. The cooling member and thesemiconductor module are disposed between the first conductive memberand the second conductive member.

According to the configuration, the conductive members connecting thesemiconductor module and the passive element are cooled by the coolingmember disposed between the two conductive members. Therefore, anincrease in the temperature of the passive element due to the heat fromthe semiconductor module is suppressed. Also, since the two conductivemembers connect the semiconductor module and the passive element fromboth sides of the cooling member, the conductive members do not need tomake a detour through the cooling member and the passive element.Accordingly, the lengths of the conductive members may be made short. Anincrease in inductance may thereby be suppressed.

Moreover, a third semiconductor device according to the presentdisclosure includes a first semiconductor module including a firstsemiconductor element, a second semiconductor module including a secondsemiconductor element, and a cooling member where the firstsemiconductor module and the second semiconductor module are installed.The first semiconductor module and the second semiconductor module areinstalled on a side surface of the cooling member. The firstsemiconductor module includes a first power terminal and a second powerterminal that are electrically connected to the first semiconductorelement and that protrude from the first semiconductor module. And thesecond semiconductor module includes a third power terminal and a fourthpower terminal that are electrically connected to the secondsemiconductor element and that protrude from the second semiconductormodule. The second power terminal of the first semiconductor module isconnected to the third power terminal of the second semiconductormodule. The third power terminal of the second semiconductor moduleprotrudes from the second semiconductor module, at a position facing theside surface of the cooling member.

According to the configuration, cooling may be performed also by thepower terminals protruding from the semiconductor module, at a positionfacing the side surface of the cooling member. Therefore, a plurality ofsemiconductor modules connected to each other may be sufficientlycooled. In addition, since the semiconductor modules may be electricallyconnected over a short distance, an increase in inductance may besuppressed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a schematic perspective view of a semiconductor deviceaccording to a first exemplary embodiment;

FIG. 1B is a schematic side view of the semiconductor device accordingto the first exemplary embodiment;

FIG. 1C is a schematic perspective view of a first bus bar of thesemiconductor device according to the first exemplary embodiment;

FIG. 1D is a schematic perspective view of a second bus bar of thesemiconductor device according to the first exemplary embodiment;

FIG. 2A is a schematic cross-sectional view of the semiconductor deviceaccording to the first exemplary embodiment, along a line IIA-IIA inFIG. 1B;

FIG. 2B is a schematic cross-sectional view of the semiconductor deviceaccording to the first exemplary embodiment, along a line IIB-IIB inFIG. 2A;

FIG. 3 is a diagram showing a circuit of the semiconductor deviceaccording to the first exemplary embodiment;

FIG. 4 is a schematic cross-sectional view of the semiconductor deviceaccording to the first exemplary embodiment where arrangement of busbars is changed, the schematic cross-sectional view showing a positioncorresponding to the line IIB-IIB in FIG. 2A;

FIG. 5A is a schematic cross-sectional view of a semiconductor deviceaccording to a second exemplary embodiment, at a position correspondingto the line IIA-IIA in FIG. 1B;

FIG. 5B is a schematic cross-sectional view of the semiconductor deviceaccording to the second exemplary embodiment, along a line VB-VB in FIG.5A;

FIG. 6A is a schematic cross-sectional view of a semiconductor deviceaccording to a third exemplary embodiment, at a position correspondingto the line IIA-IIA in FIG. 1B;

FIG. 6B is a schematic cross-sectional view of the semiconductor deviceaccording to the third exemplary embodiment, along a line VIB-VIB inFIG. 6A;

FIG. 7A is a schematic cross-sectional view of a semiconductor deviceaccording to a fourth exemplary embodiment, at a position correspondingto the line IIA-IIA in FIG. 1B;

FIG. 7B is a schematic cross-sectional view of the semiconductor deviceaccording to the fourth exemplary embodiment, along a line VIIB-VIIB inFIG. 7A;

FIG. 8A is a schematic cross-sectional view of a semiconductor deviceaccording to a fifth exemplary embodiment, at a position correspondingto the line IIA-IIA in FIG. 1B;

FIG. 8B is a schematic cross-sectional view of the semiconductor deviceaccording to the fifth exemplary embodiment, along a line VIIIB-VIIIB inFIG. 8A;

FIG. 9A is a schematic cross-sectional view of a semiconductor deviceaccording to a sixth exemplary embodiment, at a position correspondingto the line IIA-IIA in FIG. 1B;

FIG. 9B is a schematic cross-sectional view of the semiconductor deviceaccording to the sixth exemplary embodiment, along a line IXB-IXB inFIG. 9A;

FIG. 10 is a schematic cross-sectional view of a semiconductor deviceaccording to a seventh exemplary embodiment, at a position correspondingto the line IIA-IIA in FIG. 1B;

FIG. 11A is a schematic cross-sectional view of a semiconductor deviceaccording to an eighth exemplary embodiment, at a position correspondingto the line IIA-IIA in FIG. 1B;

FIG. 11B is a schematic cross-sectional view of the semiconductor deviceaccording to the eighth exemplary embodiment, along a line XIB-XIB inFIG. 11A;

FIG. 12A is a schematic cross-sectional view of a semiconductor deviceaccording to a ninth exemplary embodiment, at a position correspondingto the line IIA-IIA in FIG. 1B;

FIG. 12B is a schematic cross-sectional view of the semiconductor deviceaccording to the ninth exemplary embodiment, along a line XIIB-XIIB inFIG. 12A;

FIG. 13A is a schematic cross-sectional view of a semiconductor deviceaccording to a tenth exemplary embodiment, at a position correspondingto the line IIA-IIA in FIG. 1B;

FIG. 13B is a schematic cross-sectional view of the semiconductor deviceaccording to the tenth exemplary embodiment, along a line XIIIB-XIIIB inFIG. 13A;

FIG. 14A is a schematic view of a capacitor according to a firstvariation;

FIG. 14B is an explanatory structural view of the capacitor according tothe first variation;

FIG. 15A is a schematic cross-sectional view of a semiconductor deviceaccording to a second variation, at a position corresponding to the lineIIA-IIA in FIG. 1B;

FIG. 15B is a schematic locally-enlarged view of semiconductor elementsof the semiconductor device according to the second variation and theirsurroundings;

FIG. 16A is a schematic perspective view of a semiconductor deviceaccording to an eleventh exemplary embodiment, seen from above;

FIG. 16B is a schematic perspective view of the semiconductor deviceaccording to the eleventh exemplary embodiment, seen from below;

FIG. 17 is a schematic perspective view of a semiconductor moduleaccording to the eleventh exemplary embodiment;

FIG. 18 is a schematic view describing connection between semiconductormodules according to the eleventh exemplary embodiment;

FIG. 19 is a diagram showing a circuit of the semiconductor deviceaccording to the eleventh exemplary embodiment;

FIG. 20 is a schematic view describing connection between semiconductormodules according to a twelfth exemplary embodiment;

FIG. 21A is a schematic side view of a semiconductor device according toa thirteenth exemplary embodiment;

FIG. 21B is a schematic bottom view of the semiconductor deviceaccording to the thirteenth exemplary embodiment;

FIG. 22A is a schematic side view of a semiconductor device according toa fourteenth exemplary embodiment;

FIG. 22B is a schematic bottom view of the semiconductor deviceaccording to the fourteenth exemplary embodiment; and

FIG. 23 is a schematic side view of a semiconductor device according toa fifteenth exemplary embodiment.

DESCRIPTION OF EMBODIMENTS

First, problems of conventional techniques will be described.

According to the power conversion device disclosed in UnexaminedJapanese Patent Publication No. 2010-252461, one of two capacitorterminals is solely disposed between a semiconductor module and acapacitor, and the other capacitor terminal is not sufficiently cooled.Also, in order to increase a thermal contact area between the capacitorterminal and the cooler, the capacitor terminal is extended between thesemiconductor module and the capacitor. As a result, there is a newproblem that the length of the capacitor terminal is increased, andconsequently the inductance is increased.

On the other hand, according to the power conversion device disclosed inUnexamined Japanese Patent Publication No. 2005-73374, a terminal of thesemiconductor module protruding from between the refrigerant tubes isconnected at a power wiring portion disposed on the terminal, and thusheat dissipation from the terminal to the refrigerant tubes is notenough. Also, the wiring length is increased, causing the inductance toincrease.

The present disclosure provides a semiconductor device that suppressesan increase in the temperature of other electronic devices, such as acapacitor, caused by generation of heat by a semiconductor module. Thereis also provided a semiconductor device that suppresses an increase inthe inductance caused by the length of a conductive member betweensemiconductor modules. The semiconductor device of the presentdisclosure may be suitably used for power conversion by an invertercircuit or the like.

Hereinafter, each exemplary embodiment will be described with referenceto the drawings.

First Exemplary Embodiment

A configuration of a semiconductor device according to a first exemplaryembodiment will be described with reference to FIGS. 1A to 4.

FIG. 1A is a schematic perspective view of the semiconductor deviceaccording to the first exemplary embodiment, and FIG. 1B is a schematicside view of the semiconductor device according to the first exemplaryembodiment. To facilitate description, package 6 is shown in a mannerallowing the structure inside to be seen. Also, coordinate axes areindicated in each drawing. Here, the direction from the bottom to thetop of the drawing in FIG. 1A is given as a Z-direction, a longitudinaldirection, of the semiconductor device, which is perpendicular to theZ-direction is given as a Y-direction, and the width direction is givenas an X-direction. FIG. 1C is a schematic perspective view of a firstbus bar of the semiconductor device according to the first exemplaryembodiment, and FIG. 1D is a schematic perspective view of a second busbar of the semiconductor device according to the first exemplaryembodiment. FIG. 2A is a schematic cross-sectional view of thesemiconductor device according to the first exemplary embodiment, alonga line IIA-IIA in FIG. 1B, and FIG. 2B is a schematic cross-sectionalview of the semiconductor device according to the first exemplaryembodiment, along a line IIB-IIB in FIG. 2A. In FIG. 2B, to facilitatedescription, positions of semiconductor modules 1 and semiconductorelements 16 a, 16 b are shown by dotted lines. FIG. 3 is a diagramshowing a circuit of the semiconductor device according to the firstexemplary embodiment. FIG. 4 is a schematic cross-sectional view of thesemiconductor device according to the first exemplary embodiment wherearrangement of bus bars is changed, the schematic cross-sectional viewshowing a position corresponding to the line IIB-IIB in FIG. 2A

As shown in FIGS. 1A and 1B, the semiconductor device of the presentexemplary embodiment has three semiconductor modules 1 and threecapacitors 4 for temporarily storing power from a battery disposed nextto one another in the Y-direction. Cooling member 2 is disposed betweensemiconductor modules 1 and capacitors 4, and cooling member 2 includeschannel 3 inside. Semiconductor module 1 includes semiconductor elements16 a, 16 b (not shown) inside, and since heat is generated at the timeof driving of a motor and the like, harmful effect is imposed onperipheral electronic components by the heat. Accordingly, with thesemiconductor device of the present exemplary embodiment, cooling member2 is provided between semiconductor modules 1 and capacitors 4 so thatheat from semiconductor modules 1 is absorbed by cooling member 2, andcapacitors 4 are prevented from being at a high temperature.Additionally, semiconductor modules 1, capacitors 4, and cooling member2 are covered by package 6. Package 6 is formed from a sealing resin forsealing semiconductor modules 1, capacitors 4, cooling member 2 and thelike, and a case enclosing the sealing resin. As the sealing resin, anepoxy resin, a silicone resin or the like is used, and as the case, onethat is obtained by molding a polyphenylenesulfide (PPS) resin or apolybutyleneterephthalate (PBT) resin is used. Additionally, package 6may be configured by using only the sealing resin and without using thecase, or package 6 may be configured with the case formed of a metalmaterial such as aluminum (Al).

Semiconductor module 1 constitutes an inverter circuit for driving amotor, shown in FIG. 3, and includes semiconductor elements 16 a, 16 bconfigured from a transistor, such as an IGBT element, and a diode. Aconnection with a wiring to the motor is disposed between semiconductorelement 16 a and semiconductor element 16 b. Semiconductor element 16 bis connected on a negative electrode side of the connection, andsemiconductor element 16 a is connected on a positive electrode side ofthe connection. The negative electrode side is referred to as a lowside, and the positive electrode side is referred to as a high side.High-side semiconductor element 16 a and low-side semiconductor element16 b are paired up. When the motor is driven, power is supplied fromhigh-side semiconductor element 16 a, and thus a greater amount of heatis generated by high-side semiconductor element 16 a compared withlow-side semiconductor element 16 b. Therefore, the temperature ofhigh-side semiconductor element 16 a becomes higher. As shown in FIG.1A, three power terminals, namely, power terminal (P terminal) 21 a tobe connected to high-side semiconductor element 16 a, power terminal (Nterminal) 21 b to be connected to low-side semiconductor element 16 b,and power terminal 21 c to be connected to the motor, extend from eachsemiconductor module 1.

As shown in FIGS. 1A and 2A, semiconductor module 1 and capacitor 4 areelectrically connected by first bus bar 5 a and second bus bar 5 bformed by strip-shaped conductive members. First bus bar 5 a isconnected to P terminal 21 a connected to high-side semiconductorelement 16 a. And second bus bar 5 b is connected to N terminal 21 bconnected to low-side semiconductor element 16 b. Also, capacitor 4includes electrodes on an upper surface and a lower surface,respectively. The electrode on the upper surface of capacitor 4 isconnected to first bus bar 5 a, and the electrode on the lower surfaceof capacitor 4 is connected to second bus bar 5 b. Here, first bus bar 5a and second bus bar 5 b are collectively referred to as bus bars.

Moreover, first bus bar 5 a and second bus bar 5 b extend throughthrough hole 2 a of cooling member 2, and connect capacitor 4 andsemiconductor module 1. That is, inside through hole 2 a, first bus bar5 a and second bus bar 5 b are surrounded by cooling member 2, and firstbus bar 5 a and second bus bar 5 b face cooling member 2 on all of fourside aspects. The amount of heat dissipation from the bas bars tocooling member 2 may thus be increased.

As shown in FIGS. 1A and 2A, first bus bar 5 a is disposed betweencooling member 2 and capacitor 4, and is bent at a right angle near anedge of the upper surface of capacitor 4. First bus bar 5 a extendsupward to pass through through hole 2 a of cooling member 2, and is thenconnected to P terminal 21 a of semiconductor module 1. Also, as shownin FIG. 1C, first bus bar 5 a has a part with a width of W1, and a partwith a width of W2, which is greater than W1. As shown in FIG. 1B, firstbus bar 5 a has the width of W1 at a part connected to P terminal 21 aof semiconductor module 1 and inside through hole 2 a of cooling member2. And first bus bar 5 a has the width of W2, which is greater than W1,between cooling member 2 and capacitor 4. Accordingly, an area of firstbus bar 5 a facing cooling member 2 is increased, and the amount of heatdissipation from first bus bar 5 a to cooling member 2 may be increased.

Furthermore, as shown in FIGS. 1A and 2A, second bus bar 5 b is bent ata right angle near an edge of the lower surface of capacitor 4. Secondbus bar 5 b extends upward to pass through through hole 2 a of coolingmember 2, and is then connected to N terminal 21 b of semiconductormodule 1. Also, as shown in FIG. 1D, second bus bar 5 b has a part witha width of W3, and a part with a width of W4, which is greater than W3.As shown in FIG. 1B, second bus bar 5 b has the width of W3 at a partconnected to N terminal 21 b of semiconductor module 1 and insidethrough hole 2 a of cooling member 2. And second bus bar 5 b has thewidth of W4, which is greater than W3, from a bent portion near thelower surface of capacitor 4 to through hole 2 a of cooling member 2.That is, second bus bar 5 b has a third width (W3) and a fourth width(W4), which is greater than the third width (W3) between semiconductormodule 1 and capacitor 4. Accordingly, a heat dissipation area isincreased at a part, of second bus bar 5 b, with a wide width, and theamount of heat dissipation from second bus bar 5 b to package 6 and thelike may be increased.

Here, first bus bar 5 a according to the present exemplary embodiment isan example of a “first conductive member” of the present application,and second bus bar 5 b is an example of a “second conductive member” ofthe present application. Also, W1 according to the present exemplaryembodiment is an example of a “first width” of the present application,and W2 is an example of a “second width” of the present application.

Next, an internal structure of the semiconductor device of the presentexemplary embodiment will be described in detail with reference to FIGS.2A and 2B. As shown in FIGS. 2A and 2B, semiconductor module 1 includesinside high-side semiconductor element 16 a and low-side semiconductorelement 16 b. P terminal 21 a and N terminal 21 b for power, extendingfrom semiconductor module 1, are connected to first bus bar 5 a andsecond bus bar 5 b, respectively.

First bus bar 5 a is disposed between capacitor 4 and cooling member 2,and is connected to the electrode on the upper surface of capacitor 4.Also, first bus bar 5 a is bent at a right angle at a position separatefrom the electrode on the upper surface of capacitor 4. And first busbar 5 a passes through through hole 2 a of cooling member 2, and isconnected to P terminal 21 a extending from semiconductor module 1.Also, second bus bar 5 b is connected to the electrode on the lowersurface of capacitor 4, and is bent at a right angle at a positionseparate from the electrode on the lower surface of capacitor 4. Andsecond bus bar 5 b passes through through hole 2 a of cooling member 2,and is connected to N terminal 21 b extending from semiconductor module1.

Moreover, channel 3 allowing a cooling medium, such as water, ethyleneglycol or a refrigerant gas, to flow is formed to cooling member 2.Channel 3 is curved inside cooling member 2, and includes flow inlet 3 aand flow outlet 3 b on a same side surface of cooling member 2. Here,semiconductor module 1 is disposed on an upper surface of cooling member2 so as to be positioned above channel 3. The amount of heat dissipationfrom semiconductor module 1 to channel 3 may thereby be increased. Also,high-side semiconductor element 16 a is disposed above channel 3, on aside nearer to flow inlet 3 a. A cooling medium flowing through channel3 absorbs heat and has its temperature increased while flowing from flowinlet 3 a to flow outlet 3 b. Accordingly, a cooling medium nearer toflow inlet 3 a has a lower temperature, and may absorb a greater amountof heat. As described above, since high-side semiconductor element 16 agenerates more heat, an increase in the temperature of semiconductormodule 1 may be suppressed by disposing high-side semiconductor element16 a above channel 3, on the side nearer to flow inlet 3 a.

As described above, first bus bar 5 a and second bus bar 5 b passthrough through hole 2 a of cooling member 2, and connect semiconductormodule 1 and capacitor 4. With the bus bars configured to pass nearcooling member 2, heat dissipation from the bus bars to cooling member 2may be promoted, and heat transferred from semiconductor module 1 tocapacitor 4 may be reduced by the bus bars.

As shown in FIG. 2B, cross sections of first bus bar 5 a and second busbar 5 b each have a rectangular shape, and have a first side surfacecorresponding to a long side of the rectangle and a second side surfacecorresponding to a short side of the rectangle. Since the first sidesurfaces have larger areas, first bus bar 5 a and second bus bar 5 b aredisposed with the first side surfaces facing the part, of cooling member2, where channel 3 is provided. Accordingly, compared to a case wherethe second side surfaces with smaller areas face the part, of coolingmember 2, where channel 3 is provided, the amount of heat dissipationfrom first bus bar 5 a and second bus bar 5 b to cooling member 2 isincreased. Here, first bus bar 5 a and second bus bar 5 b are disposednext to each other, along a direction parallel to a direction of channel3. When disposed in this manner, first bus bar 5 a and second bus bar 5b may face the part, of cooling member 2, where channel 3 is provided,with nothing between the bus bars and cooling member 2, and thus agreater amount of heat may be dissipated to cooling member 2.

On the other hand, as shown in FIG. 4, first bus bar 5 a and second busbar 5 b may be disposed with the first side surfaces overlapping eachother. When disposed in this manner, the cooling effect may be reducedbut an increase in inductance may be suppressed compared to the casewhere first bus bar 5 a and second bus bar 5 b are disposed next to eachother, along the direction parallel to the direction of channel 3.Mutual inductance of adjacent current paths is given by Lenz's law, andinductance is cancelled by first bus bar 5 a and second bus bar 5 bwhose currents are in opposite directions. In the present exemplaryembodiment, since the first side surfaces, which are the larger sidesurfaces, of first bus bar 5 a and second bus bar 5 b face each other,greater inductance is cancelled. Thus, an increase in the inductance ofthe entire semiconductor device may be suppressed.

As described above, by causing first bus bar 5 a and second bus bar 5 bto pass through through hole 2 a of cooling member 2, transfer of heatfrom semiconductor module 1 to capacitor 4 may be suppressed. Thus, anincrease in the temperature of capacitor 4 may be suppressed. Inaddition, by providing a wide part to first bus bar 5 a, which isconnected to high-side semiconductor element 16 a generating a greatamount of heat, and disposing the wide part between cooling member 2 andcapacitor 4, the amount of heat dissipation to cooling member 2 may beincreased. Also, by providing a wide part to second bus bar 5 b notdisposed between cooling member 2 and capacitor 4, the amount of heatdissipation from second bus bar 5 b to package 6 and the like may beincreased because a heat dissipation area may be increased. Accordingly,an increase in the temperature of capacitor 4 may be further suppressed.

Additionally, a film capacitor with a high insulation property may beused as capacitor 4 of the present exemplary embodiment. A filmcapacitor has a structure where metal foils as a cathode and an anodeare formed and wound around a plastic film or the like.

Here, capacitor 4 according to the present exemplary embodiment is anexample of a “passive element” of the present application. Additionally,other than capacitor 4, the “passive element” of the present applicationincludes a reactor and the like.

As described above, the semiconductor device according to the presentexemplary embodiment may increase the amount of heat dissipation fromfirst bus bar 5 a and second bus bar 5 b by causing first bus bar 5 aand second bus bar 5 b to pass through through hole 2 a of coolingmember 2, disposing first bus bar 5 a between cooling member 2 andcapacitor 4, and providing a wide part to second bus bar 5 b.Accordingly, transfer of heat from semiconductor module 1 to capacitor 4may be suppressed, and an increase in the temperature of capacitor 4 dueto heat generation by semiconductor module 1 may be suppressed.

Second Exemplary Embodiment

A configuration of a semiconductor device according to a secondexemplary embodiment will be described with reference to FIGS. 5A and5B. FIG. 5A is a schematic cross-sectional view of the semiconductordevice according to the second exemplary embodiment, at a positioncorresponding to the line IIA-IIA in FIG. 1B, and FIG. 5B is a schematiccross-sectional view of the semiconductor device according to the secondexemplary embodiment, along a line VB-VB in FIG. 5A. As shown in FIGS.5A and 5B, according to the semiconductor device of the second exemplaryembodiment, first bus bars 5 a and second bus bars 5 b extend throughcut-out portions 2 b provided to cooling member 2. Other configurationsare the same as those in the first exemplary embodiment.

According to the present exemplary embodiment, first bus bar 5 a andsecond bus bar 5 b face cooling member 2 at three side aspects otherthan an opening direction of cut-out portion 2 b. Accordingly, theamount of heat dissipation from the bus bars may be increased. Also,compared to a case where through holes 2 a are formed to cooling member2, the width of cooling member 2 may be reduced, and the semiconductordevice may be miniaturized.

Third Exemplary Embodiment

A configuration of a semiconductor device according to a third exemplaryembodiment will be described with reference to FIGS. 6A and 6B. FIG. 6Ais a schematic cross-sectional view of the semiconductor deviceaccording to the third exemplary embodiment, at a position correspondingto the line IIA-IIA in FIG. 1B, and FIG. 6B is a schematiccross-sectional view of the semiconductor device according to the thirdexemplary embodiment, along a line VIB-VIB in FIG. 6A. As shown in FIGS.6A and 6B, according to the semiconductor device of the third exemplaryembodiment, through holes 2 a are not formed to cooling member 2, andfirst bus bars 5 a and second bus bars 5 b do not pass through throughholes 2 a of cooling member 2. Moreover, another cooling member 2 isprovided adjacent to first bus bars 5 a and second bus bars 5 b, andfirst bus bars 5 a and second bus bars 5 b are disposed such that firstbus bars 5 a and second bus bars 5 b are interposed between two coolingmembers 2. Other configurations are the same as those in the firstexemplary embodiment.

According to the present exemplary embodiment, first bus bars 5 a andsecond bus bars 5 b face both of two cooling members 2 disposed on bothsides, at the first side surfaces with large areas. That is, first busbars 5 a and second bus bars 5 b each face cooling members 2 at two sidesurfaces. Accordingly, the amount of heat dissipation from the bus barsto cooling members 2 may be increased, as in a case where the bus barsare disposed inside through holes 2 a of cooling member 2. Moreover,cooling members 2 on both sides of the bus bars include channel 3 forallowing a cooling medium to flow. Accordingly, cooling members 2 onboth sides of the bus bars may be maintained at a low temperature, andthe amount of heat dissipation from the bus bars to cooling member 2 maybe increased. An increase in the temperature of capacitor 4 may therebybe suppressed.

Fourth Exemplary Embodiment

A configuration of a semiconductor device according to a fourthexemplary embodiment will be described with reference to FIGS. 7A and7B. FIG. 7A is a schematic cross-sectional view of the semiconductordevice according to the fourth exemplary embodiment, at a positioncorresponding to the line IIA-IIA in FIG. 1B, and FIG. 7B is a schematiccross-sectional view of the semiconductor device according to the fourthexemplary embodiment, along a line VIIB-VIIB in FIG. 7A. As shown inFIGS. 7A and 7B, according to the semiconductor device of the fourthexemplary embodiment, channels 3 inside cooling member 2 are not curvedinside cooling member 2, and include flow inlets 3 a at one side surfaceof cooling member 2, and flow outlets 3 b at an opposite side surface.That is, a cooling medium flows in one direction through the inside ofcooling member 2, and does not return to the side surface where flowinlets 3 a are present. Also, one each of channels 3 is provided belowhigh-side semiconductor element 16 a inside semiconductor module 1, andanother each of channels 3 is provided below low-side semiconductorelement 16 b inside semiconductor module 1. Other configurations are thesame as those in the first exemplary embodiment.

According to the present exemplary embodiment, since a plurality ofchannels 3 are formed to cooling member 2, the cooling capacity is high.Thus, the amount of heat dissipation from semiconductor modules 1, thebus bars, and capacitors 4 may be increased. Moreover, since channel 3is provided below each of high-side semiconductor elements 16 a andlow-side semiconductor elements 16 b inside semiconductor modules 1, thetemperature of a cooling medium flowing below low-side semiconductorelement 16 b may be reduced. Consequently, the amount of heatdissipation from semiconductor modules 1 may be increased.

Fifth Exemplary Embodiment

A configuration of a semiconductor device according to a fifth exemplaryembodiment will be described with reference to FIGS. 8A and 8B. FIG. 8Ais a schematic cross-sectional view of the semiconductor deviceaccording to the fifth exemplary embodiment, at a position correspondingto the line IIA-IIA in FIG. 1B, and FIG. 8B is a schematiccross-sectional view of the semiconductor device according to the fifthexemplary embodiment, along a line VIIIB-VIIIB in FIG. 8A. As shown inFIGS. 8A and 8B, according to the semiconductor device of the fifthexemplary embodiment, fins 7 for increasing a heat dissipation area areprovided inside channel 3 of cooling member 2. Fins 7 are provided belowsemiconductor modules 1. Other configurations are the same as those inthe first exemplary embodiment.

According to the present exemplary embodiment, the amount of heatdissipation from cooling member 2 to a cooling medium is increased byfins 7. Furthermore, because fins 7 are provided below semiconductormodules 1, heat dissipation particularly from semiconductor modules 1may be promoted.

Sixth Exemplary Embodiment

A configuration of a semiconductor device according to a sixth exemplaryembodiment will be described with reference to FIGS. 9A and 9B. FIG. 9Ais a schematic cross-sectional view of the semiconductor deviceaccording to the sixth exemplary embodiment, at a position correspondingto the line IIA-IIA in FIG. 1B, and FIG. 9B is a schematiccross-sectional view of the semiconductor device according to the sixthexemplary embodiment, along a line IXB-IXB in FIG. 9A. As shown in FIGS.9A and 9B, according to the semiconductor device of the sixth exemplaryembodiment, fins 7 are provided inside channel 3 of cooling member 2,near a curved portion of channel 3, so as to control a direction of flowof a cooling medium so that the flow of a cooling medium is directedtoward a center side of the curve. Other configurations are the same asthose in the first exemplary embodiment.

When a cooling medium flows through the curved portion inside channel 3of cooling member 2, the water pressure is reduced on the inside of thecurve by a centrifugal force, and bubbles are generated. When bubblesare generated, transfer of heat from cooling member 2 to the coolingmedium is suppressed, and thus the heat dissipation effect is reduced.

According to the present exemplary embodiment, because the flow of thecooling medium may be directed toward the center side of the curve byfins 7, bubbles may be suppressed at the time of the cooling mediumflowing through the curved portion. Accordingly, reduction in the amountof heat dissipation from cooling member 2 to the cooling medium may besuppressed.

Seventh Exemplary Embodiment

A configuration of a semiconductor device according to a seventhexemplary embodiment will be described with reference to FIG. 10. FIG.10 is a schematic cross-sectional view of the semiconductor deviceaccording to the seventh exemplary embodiment, at a positioncorresponding to the line IIA-IIA in FIG. 1B. As shown in FIG. 10,according to the semiconductor device of the seventh exemplaryembodiment, two channels 3 (not shown) are provided inside coolingmember 2, and flow inlet 3 a and flow outlet 3 b of each channel aredisposed next to each other in the Z-direction. That is, according tothe semiconductor device of the seventh exemplary embodiment, unlike inthe first exemplary embodiment, channels 3 provided to cooling member 2are curved in a vertical direction (on a Y-Z plane). A cooling mediumflows from flow inlet 3 a provided on a side surface of cooling member 2into channel 3 on the upper surface (the surface where semiconductormodule 1 is disposed) side of cooling member 2. And the cooling mediumenters channel 3 on a lower surface side of cooling member 2 at thecurved portion of channel 3, and then returns to flow outlet 3 bprovided on the same side surface of cooling member 2. Also, channel 3is provided below each of high-side semiconductor element 16 a andlow-side semiconductor element 16 b inside semiconductor module 1. Otherconfigurations are the same as those in the first exemplary embodiment.

According to the present exemplary embodiment, because a plurality ofchannels 3 are formed to cooling member 2, the cooling capacity is high.Thus, the amount of heat dissipation from semiconductor modules 1, thebus bars, and capacitors 4 may be increased. Also, since channels 3 nearflow inlets 3 a are disposed on a side closer to the surface wheresemiconductor modules 1 are disposed, the amount of heat dissipationfrom semiconductor modules 1 may be increased.

Eighth Exemplary Embodiment

A configuration of a semiconductor device according to an eighthexemplary embodiment will be described with reference to FIGS. 11A and11B. FIG. 11A is a schematic cross-sectional view of the semiconductordevice according to the eighth exemplary embodiment, at a positioncorresponding to the line IIA-IIA in FIG. 1B, and FIG. 11B is aschematic cross-sectional view of the semiconductor device according tothe eighth exemplary embodiment, along a line XIB-XIB in FIG. 11A. Asshown in FIGS. 11A and 11B, according to the semiconductor device of theeighth exemplary embodiment, capacitors 4 are disposed with theelectrodes of capacitors 4 positioned on both side surfaces. Also, firstbus bars 5 a and second bus bars 5 b connected to respective electrodesof capacitors 4 are separated to respective sides of cooling member 2.And first bus bars 5 a and second bus bars 5 b connect capacitors 4 andsemiconductor modules 1. That is, cooling member 2 and semiconductormodules 1 are disposed between first bus bars 5 a and second bus bars 5b. Through holes 2 a are not provided to cooling member 2. Otherconfigurations are the same as those in the first exemplary embodiment.

According to the present exemplary embodiment, first bus bars 5 a andsecond bus bars 5 b connected to respective sides of capacitors 4 areconnected to semiconductor modules 1 without passing through betweencapacitors 4 and cooling member 2. Accordingly, since lengths of busbars between capacitors 4 and semiconductor modules 1 may be reduced, anincrease in the inductance due to lengths of conductive members may besuppressed to the minimum. Also, since cooling member 2 is not disposedoutside first bus bars 5 a and second bus bars 5 b, the semiconductordevice may be miniaturized.

Also, according to the present exemplary embodiment, first bus bars 5 aconnected to high-side semiconductor elements 16 a that generate a greatamount of heat are disposed near channel 3 of cooling member 2, on theside of flow inlet 3 a. That is, first bus bars 5 a whose temperaturesbecome high are placed near channel 3, on the side of flow inlet 3 awhere the temperature of the cooling medium is low, and first bus bars 5a are made to face cooling member 2. Accordingly, the amount of heatdissipation from the bus bars may be increased, and an increase in thetemperature of capacitors 4 may be suppressed.

Additionally, in the present exemplary embodiment, first bus bars 5 aand second bus bars 5 b may include wide parts, as in the firstexemplary embodiment, at arbitrary positions between capacitors 4 andsemiconductor modules 1. Alternatively, first bus bars 5 a and secondbus bars 5 b may have a wide width in entire portion between capacitors4 and semiconductor modules 1. The amount of heat dissipation from thebus bars may thereby be increased.

Ninth Exemplary Embodiment

A configuration of a semiconductor device according to a ninth exemplaryembodiment will be described with reference to FIGS. 12A and 12B. FIG.12A is a schematic cross-sectional view of the semiconductor deviceaccording to the ninth exemplary embodiment, at a position correspondingto the line IIA-IIA in FIG. 1B, and FIG. 12B is a schematiccross-sectional view of the semiconductor device according to the ninthexemplary embodiment, along a line XIIB-XIIB in FIG. 12A. As shown inFIGS. 12A and 12B, according to the semiconductor device of the ninthexemplary embodiment, through holes 2 a are provided to cooling member2, and first bus bars 5 a extend through through holes 2 a of coolingmember 2. And first bus bars 5 a connect capacitors 4 and semiconductormodules 1. Also, as in the eighth exemplary embodiment, first bus bars 5a are disposed near channel 3 of cooling member 2, on the side of flowinlet 3 a. Other configurations are the same as those in the eighthexemplary embodiment.

According to the present exemplary embodiment, first bus bars 5 a areconnected to P terminals 21 a from high-side semiconductor elements 16 awhose temperature tends to be increased. Thus, in order to suppresstransfer of heat from semiconductor modules 1 to capacitors 4, theamount of heat dissipation from first bus bars 5 a is desirablyincreased. On the other hand, second bus bars 5 b are connected to Nterminals 21 b from low-side semiconductor elements 16 b whosetemperature tends to be lower than that of high-side semiconductorelements 16 a. Thus, the amount of heat dissipation from second bus bars5 b should be small.

Accordingly, in the present exemplary embodiment, by passing first busbars 5 a through through holes 2 a of cooling member 2, the amount ofheat dissipation from first bus bars 5 a, which is connected to Pterminals 21 a of high-side semiconductor elements 16 a generating agreat amount of heat, may be increased.

Tenth Exemplary Embodiment

A configuration of a semiconductor device according to a tenth exemplaryembodiment will be described with reference to FIGS. 13A and 13B. FIG.13A is a schematic cross-sectional view of the semiconductor deviceaccording to the tenth exemplary embodiment, at a position correspondingto the line IIA-IIA in FIG. 1B, and FIG. 13B is a schematiccross-sectional view of the semiconductor device according to the tenthexemplary embodiment, along a line XIIIB-XIIIB in FIG. 13A. As shown inFIGS. 13A and 13B, according to the semiconductor device of the tenthexemplary embodiment, through holes 2 a are provided on both sides ofcooling member 2. And each of first bus bars 5 a and second bus bars 5 bextends through through hole 2 a of cooling member 2, and connectscapacitors 4 and semiconductor modules 1. As in the eighth exemplaryembodiment, first bus bars 5 a are disposed near channel 3 of coolingmember 2, on the side of flow inlet 3 a. Other configurations are thesame as those in the eighth exemplary embodiment.

According to the present exemplary embodiment, each of first bus bars 5a and second bus bars 5 b is cooled in through hole 2 a of coolingmember 2, and thus the amount of heat dissipation from the bus bars maybe increased.

Various alterations may be made to the configurations of the first tothe tenth exemplary embodiments described above. Such variations will bedescribed below.

First Variation

A configuration of a semiconductor device according to a first variationwill be described with reference to FIGS. 14A and 14B. FIG. 14A is aschematic view of a capacitor according to the first variation, and FIG.14B is an explanatory structural view of the capacitor according to thefirst variation. As described in the first exemplary embodiment, filmcapacitors are used as capacitors 4 in the exemplary embodimentsdescribed above. Capacitors 4 of the exemplary embodiments describedabove are not provided with a winding shaft at a center, but in thepresent variation, a rod made of a highly thermal conductive material isused as core rod 10, as shown in FIG. 14A, so as to increase heatdissipation from capacitor 4. As the material of core rod 10, a metalmaterial, such as aluminum, a ceramic material or the like may be used.

Next, a structure of capacitor 4 (film capacitor) according to thepresent variation will be described with reference to FIG. 14B. As shownin FIG. 14B, capacitor 4 of the present variation has metal thin film 14of aluminum or the like formed on a surface on one side of insulationfilm 13 of plastic or the like. Also, to increase heat dissipation,highly thermal conductive carbon sheet 15 is disposed on metal thin film14. Capacitor 4 shown in FIG. 14A is formed by stacking two laminatedbodies, each including insulation film 13, metal thin film 14, andcarbon sheet 15, and winding the same around core rod 10. Here, thelaminated bodies of insulation film 13, metal thin film 14, and carbonsheet 15 are overlapped while being shifted from each other. And metalthin films 14 on protruding sides are connected to anode extractionelectrode 11 and cathode extraction electrode 12, respectively.Accordingly, insulation film 13 is interposed between metal thin film 14connected to anode extraction electrode 11 and metal thin film 14connected to cathode extraction electrode 12 so as to function as acapacitor.

In the present exemplary embodiment, since core rod 10 and carbon sheet15 with high thermal conductivity are used, heat is easily transferredfrom capacitors 4. Thus, an increase in the temperature of capacitor 4may be prevented.

Second Variation

A configuration of a semiconductor device according to a secondvariation will be described with reference to FIGS. 15A and 15B. FIG.15A is a schematic cross-sectional view of the semiconductor deviceaccording to the second variation, at a position corresponding to theline IIA-IIA in FIG. 1B, and FIG. 15B is a schematic locally-enlargedview of semiconductor elements and their surroundings (part A in FIG.15A). As shown in FIG. 15B, according to the semiconductor device of thesecond variation, semiconductor module 1 includes semiconductor elements16 a, 16 b and base substrate 17. Semiconductor elements 16 a, 16 b arefixed on base substrate 17. Semiconductor elements 16 a, 16 b and basesubstrate 17 are disposed on cooling member 2, and protrusions andrecesses are formed on a surface of base substrate 17, on the side ofcooling member 2. Also, thermal conductive member 18, such as highlythermal conductive grease or adhesive or a highly thermal conductivesheet, is inserted between base substrate 17 and cooling member 2. Otherconfigurations are the same as those in the first exemplary embodiment.

Heat generated by semiconductor elements 16 a, 16 b is transmitted tocooling member 2 through base substrate 17 and thermal conductive member18.

In the present exemplary embodiment, thermal conductive member 18 isinserted between base substrate 17 and cooling member 2. Thus, a layerof air generated between base substrate 17 and cooling member 2 isreduced, and the amount of heat dissipation from base substrate 17 tocooling member 2 is increased. Furthermore, since protrusions andrecesses are formed on the surface of base substrate 17, on the side ofcooling member 2, the amount of heat dissipation to thermal conductivemember 18 is further increased. Thus, a great amount of heat is allowedto flow to cooling member 2.

Eleventh Exemplary Embodiment

A configuration of a semiconductor device according to an eleventhexemplary embodiment will be described with reference to FIGS. 16A to19. FIG. 16A is a perspective view of the semiconductor device accordingto the eleventh exemplary embodiment, seen from above, and FIG. 16B is aperspective view of the semiconductor device according to the eleventhexemplary embodiment, seen from below. FIG. 17 is a perspective view ofa semiconductor module according to the eleventh exemplary embodiment.Also, FIG. 18 is a schematic view describing connection betweensemiconductor modules according to the eleventh exemplary embodiment,and FIG. 19 is a diagram showing a circuit of the semiconductor deviceaccording to the eleventh exemplary embodiment.

In the present exemplary embodiment, high-side semiconductor element 16a and low-side semiconductor element 16 b are formed as separatemodules. That is, the semiconductor device of the present exemplaryembodiment includes semiconductor module 1 in which high-sidesemiconductor element 16 a is incorporated (hereinafter referred to as“high-side semiconductor module 1 a”) and semiconductor module 1 inwhich low-side semiconductor element 16 b is incorporated (hereinafterreferred to as “low-side semiconductor module 1 b”). Accordingly, thedegree of freedom regarding arrangement of semiconductor modules 1inside the semiconductor device and regarding circuit configuration maybe increased. Here, high-side semiconductor element 16 a according tothe present exemplary embodiment is an example of a “first semiconductorelement” of the present application, and high-side semiconductor module1 a is an example of a “first semiconductor element module” of thepresent application. Also, low-side semiconductor element 16 b accordingto the present exemplary embodiment is an example of a “secondsemiconductor element” of the present application, and low-sidesemiconductor module 1 b is an example of a “second semiconductorelement module” of the present application.

As shown in FIG. 16A, high-side semiconductor module 1 a and low-sidesemiconductor module 1 b are disposed side by side (in the X-direction)on a side surface of cooling member 2. Also, three sets of high-sidesemiconductor module 1 a and low-side semiconductor module 1 b aredisposed alternately with cooling members 2. Also, all of high-sidesemiconductor modules 1 a are disposed in the same direction (leftdirection) with respect to low-side semiconductor modules 1 b.

As in the case of cooling members 2 described in the first exemplaryembodiment and the like, channel 3 (not shown) for allowing a coolingmedium to flow is formed inside cooling member 2 of the presentexemplary embodiment. A cooling medium flows in from flow inlet 3 aformed on a side surface of cooling member 2. The cooling medium passesthrough channel 3 inside, and flows out from flow outlet 3 b formed onan opposite side surface of cooling member 2. Flow inlet 3 a for acooling medium is formed on a side surface, of cooling member 2, nearerto high-side semiconductor module 1 a. Though, as in the fourthexemplary embodiment, a shape of channel 3 of cooling member 2 accordingto the present exemplary embodiment is straight, channel 3 may be shapedto have a curved portion as in the first exemplary embodiment.

Also, as shown in FIG. 16B, high-side semiconductor module 1 a andlow-side semiconductor module 1 b are electrically connected to eachother by P terminal 21 a, N terminal 21 b protruding from semiconductormodules 1.

P terminal 21 a, N terminal 21 b protruding from semiconductor module 1will be described with reference to FIG. 17. Here, for the sake ofexplanation, high-side semiconductor module 1 a will be described as arepresentative example. As shown in FIG. 17, P terminal 21 a and Nterminal 21 b, which are connected to high-side semiconductor element 16a inside and each has a metal plate shape, protrude from side surfacesof high-semiconductor module 1 a. Also, signal terminals 22 for controlprotrude from a side surface. Among P terminal 21 a and N terminal 21 b,P terminal 21 a, which is connected to a positive electrode side,protrudes in a direction orthogonal to a protruding direction of signalterminals 22, and N terminal 21 b, which is connected to a negativeelectrode side, protrudes in a direction opposite the protrudingdirection of signal terminals 22. After P terminal 21 a protrudes in thedirection orthogonal to the protruding direction of signal terminals 22,P terminal 21 a is bent at a right angle, and extends in a protrudingdirection of N terminal 21 b. On the other hand, after N terminal 21 bprotrudes in the direction opposite the protruding direction of signalterminals 22, N terminal 21 b is bent at a right angle, and extends in adirection opposite a protruding direction of P terminal 21 a.

With P terminal 21 a and N terminal 21 b shaped in the above manner,high-side semiconductor module 1 a and low-side semiconductor module 1 bmay be disposed next to each other, and tip ends of P terminal 21 a andN terminal 21 b may be made to overlap each other at outside coolingmember 2, as shown in FIG. 16B. Since through holes are formed to thetip ends of P terminals 21 a and N terminals 21 b, circuit for driving amotor, as shown in FIG. 19, may be formed by electrical connection by ametal rod or the like passing through the through holes. Also, since theterminals may be directly connected to each other in the above manner,an increase in the inductance caused by wiring connecting semiconductormodules 1 may be suppressed.

Here, P terminal 21 a according to the present exemplary embodiment isan example of a “first power terminal” and a “third power terminal” ofthe present application, and N terminal 21 b is an example of a “secondpower terminal” and a “fourth power terminal” of the presentapplication.

Connection between high-side semiconductor module 1 a and low-sidesemiconductor module 1 b will be described in detail with reference toFIG. 18. As described above, high-side semiconductor module 1 a andlow-side semiconductor module 1 b are disposed side by side (in theX-direction) on side surfaces of cooling members 2. Here, high-sidesemiconductor module 1 a and low-side semiconductor module 1 b aredisposed with large surfaces (upper and lower surfaces) in contact withcooling members 2. Accordingly, the amount of heat dissipation fromsemiconductor module 1 to cooling members 2 may be increased, and anincrease in the temperature of semiconductor module 1 may be suppressed.

N terminal 21 b of high-side semiconductor module 1 a is bent towardlow-side semiconductor module 1 b. On the other hand, P terminal 21 a oflow-side semiconductor module 1 b protrudes toward high-sidesemiconductor module 1 a, and is bent downward (in a direction oppositean arrow in the Z-direction). Accordingly, the tip end of N terminal 21b of high-side semiconductor module 1 a and the tip end of P terminal 21a of low-side semiconductor module 1 b may be disposed overlapping eachother.

Here, P terminal 21 a protrudes from semiconductor module 1, in parallelto a direction in which semiconductor modules 1 are disposed next toeach other (X-direction). That is, P terminal 21 a protrudes at aposition facing the side surfaces of cooling members 2. Accordingly, theamount of heat dissipation from a protruding portion of P terminal 21 ato cooling members 2 is increased, and an increase in the temperature ofsemiconductor module 1 may be suppressed.

As described above, according to the semiconductor device of the presentexemplary embodiment, a plurality of semiconductor modules 1 aredisposed on cooling members 2, and the power terminals (P terminal 21 a,N terminal 21 b) of semiconductor modules 1 are directly connected so asto suppress an increase in the inductance due to wiring and to suppressan increase in the temperature of semiconductor modules 1.

Twelfth Exemplary Embodiment

A configuration of a semiconductor device according to a twelfthexemplary embodiment will be described with reference to FIG. 20. FIG.20 is a schematic view describing connection between semiconductormodules according to the twelfth exemplary embodiment. As shown in FIG.20, the shape of N terminal 21 b of semiconductor module 1 according tothe twelfth exemplary embodiment is different from that of semiconductormodule 1 according to the eleventh exemplary embodiment. N terminal 21 bof semiconductor module 1 according to the present exemplary embodimentprotrudes in a direction orthogonal to the protruding direction(Z-direction) of signal terminals 22 and in a direction (X-direction)opposite the protruding direction of P terminal 21 a. Otherconfigurations are the same as those in the eleventh exemplaryembodiment.

According to such a configuration, by disposing high-side semiconductormodule 1 a and low-side semiconductor module 1 b at predeterminedpositions, a bent portion of P terminal 21 a and the tip end of Nterminal 21 b may be made to overlap each other. Accordingly, connectionmay be easily achieved by electrically connecting the overlappedportions of P terminal 21 a and N terminal 21 b.

Also, compared to semiconductor module 1 according to the eleventhexemplary embodiment, the wiring for connecting semiconductor modules 1may be reduced. An increase in the inductance due to wiring may therebybe further suppressed.

Furthermore, N terminal 21 b protrudes from semiconductor module 1, inparallel to the direction in which semiconductor modules 1 are disposednext to each other. Accordingly, a protruding portion of N terminal 21 bis disposed facing the side surfaces of cooling members 2. The amount ofheat dissipation from the protruding portion of N terminal 21 b tocooling members 2 may thereby be increased.

Additionally, high-side semiconductor modules 1 a may be electricallyconnected by connecting the tip ends of P terminals 21 a outside coolingmembers 2, as in the eleventh exemplary embodiment.

Thirteenth Exemplary Embodiment

A configuration of a semiconductor device according to a thirteenthexemplary embodiment will be described with reference to FIGS. 21A and21B. FIG. 21A is a schematic side view of the semiconductor deviceaccording to the thirteenth exemplary embodiment, and FIG. 21B is aschematic bottom view of the semiconductor device according to thethirteenth exemplary embodiment. As shown in FIGS. 21A and 21B,according to the semiconductor device of the thirteenth exemplaryembodiment, high-side semiconductor module 1 a and low-sidesemiconductor module 1 b are disposed facing each other across coolingmember 2. That is, high-side semiconductor module 1 a is disposed on oneside surface of cooling member 2, and low-side semiconductor module 1 bis disposed on the other surface (on the opposite side from the one sidesurface) of cooling member 2.

Moreover, high-side semiconductor module 1 a and low-side semiconductormodule 1 b are disposed in such a way that protruding directions of Pterminals 21 a are opposite each other. That is, P terminal 21 a ofhigh-side semiconductor module 1 a protrudes to the left side in thedrawing, and P terminal 21 a of low-side semiconductor module 1 bprotrudes to the right side in the drawing. Accordingly, as shown inFIG. 21B, N terminal 21 b of high-side semiconductor module 1 a and Pterminal 21 a of low-side semiconductor module 1 b may be electricallyconnected by conductive terminal connection rod 23.

Furthermore, as shown in FIG. 21B, channel 3 curved inside coolingmember 2 is formed inside cooling member 2. Channel 3 includes flowinlet 3 a on a side surface where high-side semiconductor module 1 a isdisposed and flow outlet 3 b on a side surface where low-sidesemiconductor module 1 b is disposed. Accordingly, since alow-temperature cooling medium entering from flow inlet 3 a is allowedto flow through channel 3 near high-side semiconductor module 1 a, whichgenerates a great amount of heat, the amount of heat dissipation fromhigh-side semiconductor module 1 a may be increased.

As described above, according to the semiconductor device of the presentexemplary embodiment, a set of high-side semiconductor module 1 a andlow-side semiconductor module 1 b are compactly integrated with coolingmember 2, and by combining such sets, an inverter circuit for driving amotor may be configured, for example.

Fourteenth Exemplary Embodiment

A configuration of a semiconductor device according to a fourteenthexemplary embodiment will be described with reference to FIGS. 22A and22B. FIG. 22A is a schematic side view of the semiconductor deviceaccording to the fourteenth exemplary embodiment, and FIG. 22B is aschematic bottom view of the semiconductor device according to thefourteenth exemplary embodiment. As shown in FIG. 22B, according to thesemiconductor device of the fourteenth exemplary embodiment, twochannels 3 having straight shapes formed to cooling member 2. Each ofchannels 3 does not include a curved portion. A cooling medium flowsstraight, in one direction, from one side surface to the other sidesurface of cooling member 2. Other configurations are the same as thosein the thirteenth exemplary embodiment.

Moreover, the direction of flow of a cooling medium is different betweenone channel 3 near the side surface where high-side semiconductor module1 a is disposed and the other channel 3 near the side surface wherelow-side semiconductor module 1 b is disposed.

In the present exemplary embodiment, since a plurality of channels 3 areformed to cooling member 2, the cooling capacity is high. Thus, theamount of heat dissipation from semiconductor module 1 may be increased.A downstream side, of one channel, where the temperature of a coolingmedium is high is an upstream side of the other channel, and thus highcooling capacity may be achieved on both the upstream sides and thedownstream sides of channels 3 of cooling member 2.

Fifteenth Exemplary Embodiment

A configuration of a semiconductor device according to a fifteenthexemplary embodiment will be described with reference to FIG. 23. FIG.23 is a schematic side view of the semiconductor device according to thefifteenth exemplary embodiment. As shown in FIG. 23, according to thesemiconductor device of the fifteenth exemplary embodiment, three setsof high-side semiconductor module 1 a and low-side semiconductor module1 b (not shown) of the thirteenth exemplary embodiment are arranged sideby side (in the X-direction) for common cooling member 2.

In the present exemplary embodiment, compared to a case where threesemiconductor devices of the thirteenth exemplary embodiment arecoupled, semiconductor modules 1 may be cooled by one cooling member 2.Thus, the structure is simplified, and also electrical connectionbetween semiconductor modules 1 is facilitated.

Additionally, additional cooling members 2 may be disposed on outside ofhigh-side semiconductor module 1 a and outside of low-side semiconductormodule 1 b, as in the thirteenth exemplary embodiment. The amount ofheat dissipation from semiconductor modules 1 may thereby be furtherincreased, and an increase in the temperature of semiconductor modules 1may be suppressed.

The semiconductor device according to the present disclosure has beendescribed based on exemplary embodiments, but the present disclosure isnot limited to the above-described exemplary embodiments. The technologyof the present disclosure may be applied to other exemplary embodimentsrealized by combining constitutional elements of each of the exemplaryembodiments, to variations obtained by making, to each exemplaryembodiment, various alterations conceived by a person skilled in the artwithout departing from the spirit of the present disclosure, and tovarious appliances and systems in which the semiconductor devices of thepresent disclosure are incorporated.

For example, in the thirteenth to the fifteenth exemplary embodiments,two channels 3 may be vertically formed in cooling member 2, as in theeleventh exemplary embodiment.

The semiconductor device according to the present disclosure is usefulmainly as a high-power semiconductor device for driving an electricmotor of an electric car or a hybrid car, for example.

What is claimed is:
 1. A semiconductor device comprising: asemiconductor module including a semiconductor element; a passiveelement; a cooling member disposed between the semiconductor module andthe passive element; and a first conductive member and a secondconductive member for electrically connecting the semiconductor moduleand the passive element, wherein: two or more aspects of at least one ofthe first conductive member and the second conductive member face thecooling member, the cooling member includes a through hole, and at leastone of the first conductive member and the second conductive memberextends through the through hole of the cooling member.
 2. Asemiconductor device comprising: a semiconductor module including asemiconductor element; a passive element; a cooling member disposedbetween the semiconductor module and the passive element; and a firstconductive member and a second conductive member for electricallyconnecting the semiconductor module and the passive element, wherein:two or more aspects of at least one of the first conductive member andthe second conductive member face the cooling member, the cooling memberincludes a cut-out portion, and at least one of the first conductivemember and the second conductive member extends through the cut-outportion of the cooling member.
 3. A semiconductor device comprising: asemiconductor module including a semiconductor element; a passiveelement; a cooling member disposed between the semiconductor module andthe passive element; and a first conductive member and a secondconductive member for electrically connecting the semiconductor moduleand the passive element, wherein: two or more aspects of at least one ofthe first conductive member and the second conductive member face thecooling member, the cooling member is configured from a first coolingmember and a second cooling member, and at least one of the firstconductive member and the second conductive member is disposed betweenthe first cooling member and the second cooling member.
 4. Asemiconductor device comprising: a semiconductor module including asemiconductor element; a passive element; a cooling member disposedbetween the semiconductor module and the passive element; and a firstconductive member and a second conductive member for electricallyconnecting the semiconductor module and the passive element, wherein:two or more aspects of at least one of the first conductive member andthe second conductive member face the cooling member, and the firstconductive member at least includes a part with a first width and a partwith a second width greater than the first width, the part with thesecond width being disposed between the cooling member and the passiveelement.
 5. A semiconductor device comprising: a semiconductor moduleincluding a semiconductor element; a passive element; a cooling memberdisposed between the semiconductor module and the passive element; and afirst conductive member and a second conductive member for electricallyconnecting the semiconductor module and the passive element, wherein:two or more aspects of at least one of the first conductive member andthe second conductive member face the cooling member, the cooling memberincludes a channel for allowing a cooling medium to flow, the channelincludes a curved portion, and a flow inlet of the channel and a flowoutlet of the channel are disposed on one side surface of the coolingmember.
 6. A semiconductor device comprising: a semiconductor moduleincluding a semiconductor element; a passive element; a cooling memberdisposed between the semiconductor module and the passive element; and afirst conductive member and a second conductive member for electricallyconnecting the semiconductor module and the passive element, wherein:two or more aspects of at least one of the first conductive member andthe second conductive member face the cooling member, the cooling memberincludes a channel for allowing a cooling medium to flow, a flow inletof the channel is disposed on one side surface of the cooling member,and a flow outlet of the channel is disposed on the other side surfacethat is opposite the one side surface of the cooling member.
 7. Thesemiconductor device according to claim 1, wherein: the passive elementis a film capacitor, and the film capacitor includes a core rod made ofa highly thermal conductive material.
 8. The semiconductor deviceaccording to claim 1, wherein: the passive element is a film capacitor,and the film capacitor includes a carbon sheet.
 9. The semiconductordevice according to claim 1, wherein: the semiconductor element isdisposed on a base substrate, and the base substrate is disposed on thecooling member across a thermal conductive member.
 10. A semiconductordevice comprising: a semiconductor module including a semiconductorelement; a passive element; a cooling member disposed between thesemiconductor module and the passive element; and a first conductivemember and a second conductive member for electrically connecting thesemiconductor module and the passive element, wherein the firstconductive member at least includes a part with a first width and a partwith a second width greater than the first width, the part with thesecond width being disposed between the cooling member and the passiveelement.
 11. A semiconductor device comprising: a semiconductor moduleincluding a semiconductor element; a passive element; a cooling memberdisposed between the semiconductor module and the passive element; and afirst conductive member and a second conductive member for electricallyconnecting the semiconductor module and the passive element, wherein:the cooling member and the semiconductor module are disposed between thefirst conductive member and the second conductive member, the coolingmember includes a through hole, and at least one of the first conductivemember and the second conductive member extends through the through holeof the cooling member.
 12. A semiconductor device comprising: asemiconductor module including a semiconductor element; a passiveelement; a cooling member disposed between the semiconductor module andthe passive element; and a first conductive member and a secondconductive member for electrically connecting the semiconductor moduleand the passive element, wherein: the cooling member and thesemiconductor module are disposed between the first conductive memberand the second conductive member, the cooling member includes two ormore through holes, and the first conductive member and the secondconductive member respectively extend through the through holesdifferent from one another.